电刷镀法制备大面积241Am放射源

    Preparation of Large-Area 241Am Source Using Brush Plating

    • 摘要: 以分子电镀法制备放射源的技术为基础,结合当前应用广泛的电刷镀技术,开展了电刷镀法制备大面积241Am放射源的研究。和传统的放射源制备方法相比,该方法突破了电镀槽的限制,可以任意选择源的活性面积,并且通过控制阳极镀笔在阴极上作可控制的、有规律的二维往复移动,克服了传统电镀中当源的活性面积较大时难以保证电镀源均匀性的缺点。成功制备了一批活性面积为100 mm×150 mm的大面积241Am放射源,研究了通电时间、电压以及镀液酸度对放射性核素241Am的沉积效率的影响,并对源的均匀性、牢固性进行了评价。

       

      Abstract: Based on the molecular plating and brush plating technology, a new method for preparing large-area 241Am source was developed. Compared with the traditional molecular plating, it broke through the restrictions of plating tank so that the active area of the source could be increased; and also, the automatic 2D travelling equipment resolved the problem of uniformity of large-area source through the controllable and well-regulated movement to and fro. Some sources were prepared to explore some experimental conditions such as time, voltage, and the acidity of solution that influenced the deposition efficiency of  241Am. The uniformity and firmness of sources were also discussed.

       

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