175Hf的半衰期测量

    Half-Life Measurement of 175Hf

    • 摘要: 175Hf现有的半衰期数据偏少且分歧较大,对核参数的准确使用不利。本实验通过加速器质子束流轰击175Lu,并使用HDEHP萃淋树脂进行离子交换,得到无载体无181Hf干扰的高纯度175Hf液体测量源,对其中的杂质65Zn与56Co的去污因子分别为5.2×103与2.3×103;引入一固定位置的监督源137Cs与175Hf进行了40 d的连续测量,对343 keV以及661 keV γ射线计数率的比值关于测量时间进行线性拟合,得到175Hf的半衰期为(70.73±0.25) d,并对测量结果进行了相关检验。

       

      Abstract: The existing data of 175Hf half-life are few and have large differences, which is unfavorable to use nuclear parameters accurately. In this experiment, 175Lu was bombarded by accelerator proton beam and purified by HDEHP extraction leaching resin. Then high purity 175Hf was obtained,which is free carrier and no interference of 181Hf. Decontamination factors for 65Zn and 56Co respectively are 5.2×103 and 2.3×103. 137Cs, as a supervision source, was measured lasting 40 days with 175Hf. The half-life value of 175Hf is (70.73±0.25) d obtained by fitting the relation between the ratio of 343 keV and 661 keV γ-ray counting rate and time.

       

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