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    UO2表面铝薄膜生长过程的AES原位研究

    AES Study of Growth Process of Al Thin Films on Uranium Dioxide

      摘要
    • 摘要: 室温下在俄歇电子能谱(AES)分析仪超高真空室中，通入适量O2，促使基底U表面氧化，生成UO2，然后利用Ar+枪溅射铝箔，使铝沉积在UO2表面形成Al薄膜。沉积过程中实时采集UO2表面的AES谱和低能电子损失谱(EELS)，原位分析铝薄膜在UO2表面的生长过程和膜间界面反应。研究表明，室温下， UO2表面的铝薄膜以岛状方式生长；铝与UO2之间存在相互作用，电子从铝原子向UO2中的铀离子转移，由于表面吸附氧的作用，在UO2/Al界面处存在少量的Al2O3；沉积Al原子与UO2之间发生明显的扩散行为，铝向UO2中扩散，形成了一个氧化态铀、金属铀和铝三者共存区。

       

      Abstract: Metallic uranium was exposed to 40 languirs of oxygen at room temperature in order to form UO2 on the surface of metallic U. And thin layers of aluminum on UO2 were prepared by sputter deposition under ultra high vacuum conditions. Process of Al thin film growth and its interaction with UO2 were investigated by auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS). It was shown that the Al thin film growth underwent via the VolmerWeber (VW) mode. At room temperature, Al and UO2 interact with each other, electrons transfer occurres from Al atoms to uranium ions, and a few of Al2O3 exist in the region of UO2/Al interface due to O2 adsorption to the surface. Interdiffusion between UO2 and Al is observable. Aluminum diffuses into interface region of UO2 and U. It results in the formation of a coexistence regime containing uranium oxide, metallic U and Al.

       

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